Conductance Deep-Level Transient Spectroscopic Study of 4H-SiC MESFET and Traps

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method. Hereby, we have detected five carrier tra...

Modeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects

Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...

Negative-U system of carbon vacancy in 4H-SiC.

Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V(C)) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC--the Z(1/2) lifetime-limiting defect and the EH(7) deep defect--are related to the double acceptor (2-|0) and single donor (0|+) levels...

Effect of Z1/2, EH5, and Ci1 Deep Defects on the Performance of n-type 4H-SiC Epitaxial Layers Schottky Detectors: Alpha Spectroscopy and Deep Level Transient Spectroscopy Studies

Carrier Lifetime Relevant Deep Levels In SiC

Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. These defects provide energy levels within the bandgap and may act...